skip navigationU S P T O SealUnited States Patent and Trademark Office AOTW logo
Home|Site Index|Search|Guides|Contacts|eBusiness|eBiz alerts|News|Help
Assignments on the Web > Patent Query
Patent Assignment Details
NOTE:Results display only for issued patents and published applications. For pending or abandoned applications please consult USPTO staff.

Reel/Frame:059547/0048   Pages: 5
Recorded: 04/08/2022
Attorney Dkt #:190033 00000
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 9
1
Patent #:
Issue Dt:
07/23/2013
Application #:
12861650
Filing Dt:
08/23/2010
Publication #:
Pub Dt:
02/23/2012
Title:
METHOD FOR FORMING STACKABLE NON-VOLATILE RESISTIVE SWITCHING MEMORY DEVICES
2
Patent #:
Issue Dt:
10/15/2013
Application #:
12894098
Filing Dt:
09/29/2010
Publication #:
Pub Dt:
03/29/2012
Title:
CONDUCTIVE PATH IN SWITCHING MATERIAL IN A RESISTIVE RANDOM ACCESS MEMORY DEVICE AND CONTROL
3
Patent #:
Issue Dt:
02/25/2014
Application #:
13174264
Filing Dt:
06/30/2011
Publication #:
Pub Dt:
01/03/2013
Title:
AMORPHOUS SILICON RRAM WITH NON-LINEAR DEVICE AND OPERATION
4
Patent #:
Issue Dt:
08/26/2014
Application #:
13339939
Filing Dt:
12/29/2011
Title:
DISTURB-RESISTANT NON-VOLATILE MEMORY DEVICE USING VIA-FILL AND ETCHBACK TECHNIQUE
5
Patent #:
Issue Dt:
02/25/2014
Application #:
13452657
Filing Dt:
04/20/2012
Title:
LOW TEMPERATURE P+ POLYCRYSTALLINE SILICON MATERIAL FOR NON-VOLATILE MEMORY DEVICE
6
Patent #:
Issue Dt:
10/29/2013
Application #:
13585759
Filing Dt:
08/14/2012
Title:
NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS
7
Patent #:
Issue Dt:
02/11/2014
Application #:
13679976
Filing Dt:
11/16/2012
Publication #:
Pub Dt:
03/28/2013
Title:
STACKABLE NON-VOLATILE RESISTIVE SWITCHING MEMORY DEVICE AND METHOD
8
Patent #:
Issue Dt:
12/16/2014
Application #:
13870919
Filing Dt:
04/25/2013
Publication #:
Pub Dt:
01/16/2014
Title:
CONDUCTIVE PATH IN SWITCHING MATERIAL IN A RESISTIVE RANDOM ACCESS MEMORY DEVICE AND CONTROL
9
Patent #:
Issue Dt:
10/17/2017
Application #:
14188622
Filing Dt:
02/24/2014
Publication #:
Pub Dt:
07/10/2014
Title:
LOW TEMPERATURE P+ POLYCRYSTALLINE SILICON MATERIAL FOR NON-VOLATILE MEMORY DEVICE
Assignor
1
Exec Dt:
03/01/2022
Assignee
1
BUILDING C, 888 HUAN HU 2ND ROAD
LINGANG SPECIAL DISTRICT, PUDONG NEW DISTRICT,
SHANGHAI, CHINA
Correspondence name and address
MATTHEW F. CLAPPER
WEGMAN HESSLER
6055 ROCKSIDE WOODS BLVD., STE. 200
CLEVELAND, OH 44131

Search Results as of: 05/26/2024 12:24 AM
If you have any comments or questions concerning the data displayed, contact PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified: August 25, 2017 v.2.6
| .HOME | INDEX| SEARCH | eBUSINESS | CONTACT US | PRIVACY STATEMENT