Patent Assignment Details
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| Reel/Frame: | 048858/0091 | |
| Pages: | 4 |
| | Recorded: | 04/11/2019 | | |
| Attorney Dkt #: | MR1035-2681 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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16381193
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Filing Dt:
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04/11/2019
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Publication #:
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Pub Dt:
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10/15/2020
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Title:
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METHOD OF FAST ERASING AN EEPROM WITH LOW-VOLTAGES, WHERE IONS ARE IMPLANTED AT A HIGHER CONCENTRATION TO INCREASE THE INTENSITY OF THE ELECTRIC FIELD BETWEEN THE GATE AND THE SUBSTRATE OR BETWEEN THE GATE AND THE TRANSISTOR AND THUS DECREASE THE REQUIRED VOLTAGE DIFFERENCE FOR ERASING THE EEPROM
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Assignee
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| 7F-2 NO. 28, TAI YUEN ST. |
| CHU-PEI CITY, HSINCHU COUNTY, TAIWAN |
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Correspondence name and address
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ROSENBERG, KLEIN & LEE
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3458 ELLICOTT CENTER DRIVE, SUITE 101
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ELLICOTT CITY, MD 21043
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