Patent Assignment Details
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| Reel/Frame: | 022593/0125 | |
| Pages: | 2 |
| | Recorded: | 04/24/2009 | | |
| Attorney Dkt #: | NL031500US1 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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01/22/2013
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Application #:
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10596603
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Filing Dt:
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04/24/2009
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Publication #:
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Pub Dt:
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10/15/2009
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Title:
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SEMICONDUCTOR SUBSTRATE WITH SOLID PHASE EPITAXIAL REGROWTH WITH REDUCED DEPTH OF DOPING PROFILE AND METHOD OF PRODUCING SAME
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Assignee
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| HIGH TECH CAMPUS 60 |
| EINDHOVEN, NETHERLANDS 5656 AG |
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Correspondence name and address
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NXP, B.V. NXP INTELLECTUAL PROPERTY DEPA
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M/S41-SJ
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1109 MCKAY DRIVE
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SAN JOSE, CA 95131
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