Patent Assignment Details
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| Reel/Frame: | 009864/0129 | |
| Pages: | 3 |
| | Recorded: | 03/29/1999 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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05/29/2001
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Application #:
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09282015
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Filing Dt:
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03/29/1999
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Title:
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METHOD FOR FABRICATING A NONVOLATILE MEMORY INCLUDING IMPLANTING THE SOURCE REGION, FORMING THE FIRST SPACERS, IMPLANTING THE DRAIN REGION, FORMING THE SECOND SPACERS, AND FORMING A SOURCE LINE ON THE SOURCE AND SECOND SPACERS
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Assignee
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 3, LI-HSIN ROAD 2 |
| HSINCHU, TAIWAN R.O.C |
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Correspondence name and address
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J.C. PATENTS, INC.
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JIAWEI HUANG
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1340 REYNOLDS AVENUE
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SUITE 114
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IRVINE, CA 92614
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