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Patent Assignment Details
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Reel/Frame:011667/0166   Pages: 35
Recorded: 03/16/2001
Conveyance: INTELLECTUAL PROPERTY PARTIAL RELEASE
Total properties: 203
Page 3 of 3
Pages: 1 2 3
1
Patent #:
Issue Dt:
03/19/2002
Application #:
09718219
Filing Dt:
11/21/2000
Title:
Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
2
Patent #:
NONE
Issue Dt:
Application #:
09726682
Filing Dt:
11/30/2000
Publication #:
Pub Dt:
05/10/2001
Title:
MOS-gated power device having extended trench and doping zone and process for forming same
3
Patent #:
Issue Dt:
01/13/2004
Application #:
09765177
Filing Dt:
01/18/2001
Publication #:
Pub Dt:
05/31/2001
Title:
POWER MOS DEVICE WITH INCREASED CHANNEL WIDTH AND PROCESS FOR FORMING SAME
Assignor
1
Exec Dt:
03/03/2001
Assignee
1
SUITE 100
7585 IRVINE CENTER DRIVE
IRVINE, CALIFORNIA 92618
Correspondence name and address
PRINCETON PIKE CORPORATE CENTER
DANIEL S. GOLDBERG
P.O. BOX 5218
PRINCETON, NEW JERSEY 08543-5218

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