Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
Reel/Frame: | 047836/0166 | |
| Pages: | 9 |
| | Recorded: | 12/20/2018 | | |
Attorney Dkt #: | M1374.70081US FAMILY |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
Total properties:
9
|
|
Patent #:
|
|
Issue Dt:
|
01/01/2013
|
Application #:
|
13359892
|
Filing Dt:
|
01/27/2012
|
Publication #:
|
|
Pub Dt:
|
05/17/2012
| | | | |
Title:
|
GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES WITH COMPOSITIONALLY-GRADED TRANSITION LAYER
|
|
|
Patent #:
|
|
Issue Dt:
|
11/26/2013
|
Application #:
|
13728956
|
Filing Dt:
|
12/27/2012
|
Publication #:
|
|
Pub Dt:
|
05/09/2013
| | | | |
Title:
|
GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES WITH COMPOSITIONALLY-GRADED TRANSITION LAYER
|
|
|
Patent #:
|
|
Issue Dt:
|
01/20/2015
|
Application #:
|
14083923
|
Filing Dt:
|
11/19/2013
|
Publication #:
|
|
Pub Dt:
|
05/15/2014
| | | | |
Title:
|
Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
|
|
|
Patent #:
|
|
Issue Dt:
|
01/06/2015
|
Application #:
|
14084251
|
Filing Dt:
|
11/19/2013
|
Publication #:
|
|
Pub Dt:
|
03/20/2014
| | | | |
Title:
|
GALLIUM NITRIDE DEVICES WITH ALUMINUM NITRIDE ALLOY INTERMEDIATE LAYER
|
|
|
Patent #:
|
|
Issue Dt:
|
01/06/2015
|
Application #:
|
14084429
|
Filing Dt:
|
11/19/2013
|
Publication #:
|
|
Pub Dt:
|
04/10/2014
| | | | |
Title:
|
Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
|
|
|
Patent #:
|
|
Issue Dt:
|
06/23/2015
|
Application #:
|
14452203
|
Filing Dt:
|
08/05/2014
|
Publication #:
|
|
Pub Dt:
|
12/04/2014
| | | | |
Title:
|
Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
|
|
|
Patent #:
|
|
Issue Dt:
|
09/06/2016
|
Application #:
|
14579738
|
Filing Dt:
|
12/22/2014
|
Publication #:
|
|
Pub Dt:
|
04/23/2015
| | | | |
Title:
|
Gallium Nitride Devices with Discontinuously Graded Transition Layer
|
|
|
Patent #:
|
|
Issue Dt:
|
10/04/2016
|
Application #:
|
14580064
|
Filing Dt:
|
12/22/2014
|
Publication #:
|
|
Pub Dt:
|
07/02/2015
| | | | |
Title:
|
Semiconductor Structure with Compositionally-Graded Transition Layer
|
|
|
Patent #:
|
|
Issue Dt:
|
09/06/2016
|
Application #:
|
14743218
|
Filing Dt:
|
06/18/2015
|
Publication #:
|
|
Pub Dt:
|
10/08/2015
| | | | |
Title:
|
III-Nitride Based Semiconductor Structure
|
|
Assignee
|
|
|
101 N. SEPULVEDA BLVD. |
EL SEGUNDO, CALIFORNIA 90245 |
|
Correspondence name and address
|
|
WOLF GREENFIELD & SACKS P.C.
|
|
600 ATLANTIC AVENUE
|
|
BOSTON, MA 02210
|
Search Results as of:
06/18/2024 01:31 PM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|