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Reel/Frame:040965/0173   Pages: 5
Recorded: 01/13/2017
Attorney Dkt #:213464/1
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
07/16/2019
Application #:
15326256
Filing Dt:
01/13/2017
Publication #:
Pub Dt:
07/27/2017
Title:
SUBSTRATE STRUCTURE, METHOD FOR FORMING SAME, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR USING SAME
Assignors
1
Exec Dt:
01/11/2017
2
Exec Dt:
01/11/2017
3
Exec Dt:
01/11/2017
Assignee
1
9F., C DONG, 145, GWANGGYO-RO, YEONGTONG-GU, SUWON-SI
GYEONGGI-DO, KOREA, REPUBLIC OF 443-270
Correspondence name and address
L. FRIEDMAN/HAHN LOESER & PARKS, LLP - CHICAGO
125 SOUTH WACKER DRIVE
SUITE 2900
CHICAGO, IL 60606

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