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Reel/Frame:055495/0198   Pages: 7
Recorded: 03/04/2021
Attorney Dkt #:205156/1173-693
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
17180219
Filing Dt:
02/19/2021
Publication #:
Pub Dt:
08/25/2022
Title:
P-TYPE FIELD EFFECT TRANSISTOR (PFET) ON A SILICON GERMANIUM (GE) BUFFER LAYER TO INCREASE GE IN THE PFET SOURCE AND DRAIN TO INCREASE COMPRESSION OF THE PFET CHANNEL AND METHOD OF FABRICATION
Assignors
1
Exec Dt:
03/01/2021
2
Exec Dt:
03/01/2021
3
Exec Dt:
03/01/2021
Assignee
1
5775 MOREHOUSE DRIVE
SAN DIEGO, CALIFORNIA 92121
Correspondence name and address
W&T/QUALCOMM
106 PINEDALE SPRINGS WAY
CARY, NC 27511

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