|
Total properties:
13
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/27/2016
|
Application #:
|
14550730
|
Filing Dt:
|
11/21/2014
|
|
Publication #:
|
|
Pub Dt:
|
05/28/2015
| | | | |
|
Title:
|
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/18/2020
|
Application #:
|
14706350
|
Filing Dt:
|
05/07/2015
|
|
Publication #:
|
|
Pub Dt:
|
12/03/2015
| | | | |
|
Title:
|
TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/22/2016
|
Application #:
|
15094985
|
Filing Dt:
|
04/08/2016
|
|
Publication #:
|
|
Pub Dt:
|
10/13/2016
| | | | |
|
Title:
|
SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATION OF III-N TRANSISTORS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/06/2018
|
Application #:
|
15213054
|
Filing Dt:
|
07/18/2016
|
|
Publication #:
|
|
Pub Dt:
|
01/19/2017
| | | | |
|
Title:
|
FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/03/2017
|
Application #:
|
15234405
|
Filing Dt:
|
08/11/2016
|
|
Publication #:
|
|
Pub Dt:
|
12/01/2016
| | | | |
|
Title:
|
SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/04/2017
|
Application #:
|
15376826
|
Filing Dt:
|
12/13/2016
|
|
Publication #:
|
|
Pub Dt:
|
03/30/2017
| | | | |
|
Title:
|
III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUFACTURE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/05/2017
|
Application #:
|
15449391
|
Filing Dt:
|
03/03/2017
|
|
Publication #:
|
|
Pub Dt:
|
09/07/2017
| | | | |
|
Title:
|
HYBRID STRUCTURE WITH SEPARATE CONTROLS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/06/2018
|
Application #:
|
15667876
|
Filing Dt:
|
08/03/2017
|
|
Publication #:
|
|
Pub Dt:
|
12/14/2017
| | | | |
|
Title:
|
CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/31/2022
|
Application #:
|
15931744
|
Filing Dt:
|
05/14/2020
|
|
Publication #:
|
|
Pub Dt:
|
11/19/2020
| | | | |
|
Title:
|
Transistor Structure With A Stress Layer
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/16/2024
|
Application #:
|
17109593
|
Filing Dt:
|
12/02/2020
|
|
Publication #:
|
|
Pub Dt:
|
06/03/2021
| | | | |
|
Title:
|
III-Nitride Transistor With A Modified Drain Access Region
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/04/2023
|
Application #:
|
17185317
|
Filing Dt:
|
02/25/2021
|
|
Publication #:
|
|
Pub Dt:
|
08/26/2021
| | | | |
|
Title:
|
III-Nitride Transistor With A Cap Layer For RF Operation
|
|
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
17350563
|
Filing Dt:
|
06/17/2021
|
|
Publication #:
|
|
Pub Dt:
|
12/23/2021
| | | | |
|
Title:
|
III-Nitride Diode With A Modified Access Region
|
|
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
17562164
|
Filing Dt:
|
12/27/2021
|
|
Publication #:
|
|
Pub Dt:
|
07/07/2022
| | | | |
|
Title:
|
III-NITRIDE TRANSISTOR WITH NON-UNIFORM CHANNEL REGIONS
|
|
