Total properties:
56
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03/06/2001
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09296858
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Filing Dt:
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04/22/1999
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Title:
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ELECTROSTATICALLY OPERATED TUNNELING TRANSISTOR
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Patent #:
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Issue Dt:
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11/10/2009
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09612607
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Filing Dt:
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07/07/2000
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Title:
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ELECTROSTATICALLY OPERATED TUNNELING TRANSISTOR
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Patent #:
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Issue Dt:
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08/01/2006
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10217758
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Filing Dt:
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08/12/2002
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Publication #:
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Pub Dt:
|
02/12/2004
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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Issue Dt:
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12/21/2004
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Application #:
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10342576
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Filing Dt:
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01/14/2003
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Publication #:
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Pub Dt:
|
02/12/2004
| | | | |
Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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Patent #:
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Issue Dt:
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02/13/2007
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10753504
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Filing Dt:
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01/07/2004
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Publication #:
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Pub Dt:
|
05/05/2005
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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Issue Dt:
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09/26/2006
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Application #:
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10754966
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Filing Dt:
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01/09/2004
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Publication #:
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Pub Dt:
|
07/22/2004
| | | | |
Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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Patent #:
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Issue Dt:
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05/10/2005
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Application #:
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10832576
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Filing Dt:
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04/26/2004
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Title:
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TRANSISTOR WITH WORKFUNCTION-INDUCED CHARGE LAYER
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Patent #:
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Issue Dt:
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06/03/2008
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11010048
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Filing Dt:
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12/09/2004
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Publication #:
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Pub Dt:
|
05/19/2005
| | | | |
Title:
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INSULATED GATE FIELD-EFFECT TRANSISTOR HAVING III-VI SOURCE/DRAIN LAYER(S)
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Patent #:
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Issue Dt:
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03/08/2011
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11166286
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Filing Dt:
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06/23/2005
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Publication #:
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Pub Dt:
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04/20/2006
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Title:
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PROCESS FOR FABRICATING A SELF-ALIGNED DEPOSITED SOURCE/DRAIN INSULATED GATE FIELD-EFFECT TRANSISTOR
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Patent #:
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Issue Dt:
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12/09/2008
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Application #:
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11181217
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Filing Dt:
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07/13/2005
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Publication #:
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Pub Dt:
|
11/10/2005
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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Issue Dt:
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02/08/2011
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Application #:
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11403185
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Filing Dt:
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04/11/2006
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Publication #:
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Pub Dt:
|
02/01/2007
| | | | |
Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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Patent #:
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Issue Dt:
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10/19/2010
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11678397
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Filing Dt:
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02/23/2007
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Publication #:
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Pub Dt:
|
09/27/2007
| | | | |
Title:
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METHOD FOR MAKING SEMICONDUCTOR INSULATED-GATE FIELD-EFFECT TRANSISTOR HAVING MULTILAYER DEPOSITED METAL SOURCE(S) AND/OR DRAIN(S)
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Patent #:
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Issue Dt:
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02/08/2011
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Application #:
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12197996
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Filing Dt:
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08/25/2008
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Publication #:
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Pub Dt:
|
04/23/2009
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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Issue Dt:
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09/11/2012
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12253835
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Filing Dt:
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10/17/2008
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Pub Dt:
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04/23/2009
| | | | |
Title:
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CHANNEL STRAIN INDUCED BY STRAINED METAL IN FET SOURCE OR DRAIN
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Patent #:
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Issue Dt:
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05/28/2013
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12404782
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03/16/2009
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Publication #:
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Pub Dt:
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09/16/2010
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Title:
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STRAINED-ENHANCED SILICON PHOTON-TO-ELECTRON CONVERSION DEVICES
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Patent #:
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07/03/2012
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12549227
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08/27/2009
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Publication #:
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Pub Dt:
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03/18/2010
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Title:
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FIELD EFFECT TRANSISTOR SOURCE OR DRAIN WITH A MULTI-FACET SURFACE
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Patent #:
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03/12/2013
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12869978
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Filing Dt:
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08/27/2010
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Publication #:
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Pub Dt:
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03/01/2012
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Title:
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STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
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Patent #:
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Issue Dt:
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02/25/2014
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Application #:
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12878930
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Filing Dt:
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09/09/2010
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Publication #:
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Pub Dt:
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01/13/2011
| | | | |
Title:
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METHOD FOR MAKING SEMICONDUCTOR INSULATED-GATE FIELD-EFFECT TRANSISTOR HAVING MULTILAYER DEPOSITED METAL SOURCE(S) AND/OR DRAIN(S)
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Patent #:
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Issue Dt:
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09/11/2012
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Application #:
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13019789
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Filing Dt:
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02/02/2011
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Publication #:
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Pub Dt:
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05/26/2011
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Title:
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PROCESS FOR FABRICATING A SELF-ALIGNED DEPOSITED SOURCE/DRAIN INSULATED GATE FIELD-EFFECT TRANSISTOR
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Patent #:
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04/30/2013
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13022522
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Filing Dt:
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02/07/2011
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Publication #:
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Pub Dt:
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07/14/2011
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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Issue Dt:
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02/19/2013
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Application #:
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13022559
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Filing Dt:
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02/07/2011
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Publication #:
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Pub Dt:
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09/01/2011
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Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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Patent #:
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05/20/2014
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13209186
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08/12/2011
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Pub Dt:
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02/14/2013
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Title:
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TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
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Patent #:
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Issue Dt:
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08/23/2016
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13552556
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07/18/2012
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Pub Dt:
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11/08/2012
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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07/01/2014
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13687907
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11/28/2012
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Pub Dt:
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05/16/2013
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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12/23/2014
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13757597
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02/01/2013
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Pub Dt:
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06/06/2013
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Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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Patent #:
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08/02/2016
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13762677
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02/08/2013
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08/18/2016
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Title:
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STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
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05/12/2015
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13870698
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04/25/2013
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Pub Dt:
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10/31/2013
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Title:
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STRAIN-ENHANCED SILICON PHOTON-TO-ELECTRON CONVERSION DEVICES
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05/19/2015
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14256758
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04/18/2014
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12/18/2014
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Title:
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Tensile Strained Semiconductor Photon Emission and Detection Devices and Integrated Photonics System
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02/28/2017
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14298810
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06/06/2014
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Pub Dt:
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09/25/2014
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Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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06/07/2016
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14360473
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05/23/2014
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11/06/2014
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Title:
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METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS
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02/23/2016
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14698759
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04/28/2015
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09/03/2015
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Title:
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Tensile Strained Semiconductor Photon Emission and Detection Devices and Integrated Photonics System
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12/08/2015
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14743916
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06/18/2015
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Pub Dt:
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10/08/2015
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Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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06/26/2018
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15000975
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04/04/2016
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Pub Dt:
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07/21/2016
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Title:
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TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
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11/01/2016
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15043035
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02/12/2016
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Pub Dt:
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06/09/2016
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Title:
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METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS
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02/27/2018
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15048877
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02/19/2016
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Pub Dt:
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06/16/2016
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Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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10/04/2016
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15048893
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Filing Dt:
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02/19/2016
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Publication #:
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Pub Dt:
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06/16/2016
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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09/05/2017
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15146562
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Filing Dt:
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05/04/2016
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Publication #:
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Pub Dt:
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08/25/2016
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Title:
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METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS
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Patent #:
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04/11/2017
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15186378
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06/17/2016
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Title:
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MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
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06/06/2017
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15191369
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06/23/2016
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Pub Dt:
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10/20/2016
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Title:
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STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
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Patent #:
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11/07/2017
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15251210
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Filing Dt:
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08/30/2016
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Publication #:
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Pub Dt:
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12/22/2016
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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Issue Dt:
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06/22/2021
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15418360
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01/27/2017
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Publication #:
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Pub Dt:
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05/11/2017
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Title:
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INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY BARRIERS TO THE CHANNEL
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12/04/2018
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15451164
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03/06/2017
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Pub Dt:
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03/22/2018
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Title:
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MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
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09/25/2018
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15594436
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05/12/2017
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Publication #:
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Pub Dt:
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08/31/2017
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Title:
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STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
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Patent #:
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NONE
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15655710
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Filing Dt:
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07/20/2017
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Pub Dt:
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11/09/2017
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Title:
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SOI WAFERS AND DEVICES WITH BURIED STRESSOR
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12/10/2019
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15684707
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08/23/2017
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Pub Dt:
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12/28/2017
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Title:
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METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS
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Patent #:
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Issue Dt:
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08/20/2019
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15728002
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10/09/2017
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Pub Dt:
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02/01/2018
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Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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01/29/2019
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15800450
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11/01/2017
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Pub Dt:
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03/01/2018
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Title:
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TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
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01/01/2019
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15816231
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11/17/2017
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Pub Dt:
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05/24/2018
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Title:
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NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CONTACTS WITH NEGATIVE SCHOTTKY BARRIER HEIGHT
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NONE
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15877273
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01/22/2018
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07/26/2018
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Title:
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STRAINED SEMICONDUCTOR-ON-INSULATOR BY DEFORMATION OF BURIED INSULATOR INDUCED BY BURIED STRESSOR
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10/02/2018
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15877837
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01/23/2018
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Pub Dt:
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06/14/2018
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Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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01/22/2019
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15981594
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05/16/2018
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Pub Dt:
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09/20/2018
| | | | |
Title:
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METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS
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Patent #:
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03/03/2020
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16105277
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08/20/2018
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Pub Dt:
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01/03/2019
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Title:
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STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
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02/04/2020
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16175637
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10/30/2018
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02/28/2019
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Title:
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MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
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12/10/2019
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16202507
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11/28/2018
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04/11/2019
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Title:
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NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CONTACTS WITH NEGATIVE SCHOTTKY BARRIER HEIGHT
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07/28/2020
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16213876
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12/07/2018
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Pub Dt:
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04/18/2019
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Title:
|
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
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Patent #:
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Issue Dt:
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11/10/2020
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Application #:
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16283578
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Filing Dt:
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02/22/2019
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Publication #:
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Pub Dt:
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08/27/2020
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Title:
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SOI WAFERS AND DEVICES WITH BURIED STRESSOR
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