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Total properties:
11
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Patent #:
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Issue Dt:
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12/04/2001
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Application #:
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09530050
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Filing Dt:
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07/07/2000
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Title:
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METHOD FOR PRODUCING A GALLIUM NITRIDE EPITAXIAL LAYER
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Patent #:
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Issue Dt:
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10/12/2004
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Application #:
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09960829
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Filing Dt:
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09/21/2001
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Publication #:
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Pub Dt:
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10/24/2002
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Title:
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PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALLIUM NITRIDE
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Patent #:
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Issue Dt:
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02/10/2009
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Application #:
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10516358
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Filing Dt:
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11/24/2004
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Publication #:
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Pub Dt:
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10/06/2005
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Title:
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METHOD FOR EPITAXIAL GROWTH OF A GALLIUM NITRIDE FILM SEPARATED FROM ITS SUBSTRATE
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Patent #:
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Issue Dt:
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11/25/2008
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Application #:
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10522397
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Filing Dt:
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10/21/2005
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Publication #:
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Pub Dt:
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05/11/2006
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Title:
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METHOD FOR PRODUCING BY VAPOUR-PHASE EPITAXY A GALLIUM NITRIDE FILM WITH LOW DEFECT DENSITY
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Patent #:
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Issue Dt:
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11/04/2008
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Application #:
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10556316
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Filing Dt:
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11/09/2005
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Publication #:
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Pub Dt:
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11/30/2006
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Title:
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MANUFACTURING GALLIUM NITRIDE SUBSTRATES BY LATERAL OVERGROWTH THROUGH MASKS AND DEVICES FABRICATED THEREOF
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Patent #:
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Issue Dt:
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10/16/2007
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Application #:
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10573463
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Filing Dt:
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12/01/2006
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Publication #:
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Pub Dt:
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03/29/2007
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Title:
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METHOD OF PRODUCING SELF SUPPORTING SUBSTRATES COMPRISING III-NITRIDES BY MEANS OF HETEROEPITAXY ON A SACRIFICIAL LAYER
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Patent #:
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Issue Dt:
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10/10/2006
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Application #:
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10695724
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Filing Dt:
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10/28/2003
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Publication #:
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Pub Dt:
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07/15/2004
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Title:
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PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALLIUM NITRIDE
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Patent #:
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Issue Dt:
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07/14/2009
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Application #:
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11519702
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Filing Dt:
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09/11/2006
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Publication #:
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Pub Dt:
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03/29/2007
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Title:
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PROCESS FOR PRODUCING AN EPITALIXAL LAYER OF GALIUM NITRIDE
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Patent #:
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Issue Dt:
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10/09/2012
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Application #:
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12086674
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Filing Dt:
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06/12/2008
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Publication #:
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Pub Dt:
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11/12/2009
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Title:
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PROCESS FOR GROWTH OF LOW DISLOCATION DENSITY GAN
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Patent #:
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Issue Dt:
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10/04/2011
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Application #:
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12467986
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Filing Dt:
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05/18/2009
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Publication #:
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Pub Dt:
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01/07/2010
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Title:
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PROCESS FOR PRODUCING AN EPITAXIAL LAYER OF GALIUM NITRIDE
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Patent #:
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Issue Dt:
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10/15/2013
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Application #:
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12516564
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Filing Dt:
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08/27/2009
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Publication #:
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Pub Dt:
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03/25/2010
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Title:
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METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE
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