Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
| Reel/Frame: | 029650/0359 | |
| Pages: | 3 |
| | Recorded: | 01/17/2013 | | |
| Attorney Dkt #: | SMIC00X-US-U1 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
|
Total properties:
5
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/14/2000
|
Application #:
|
09107567
|
Filing Dt:
|
06/29/1998
|
|
Title:
|
HYDROGENATED OXIDIZED SILICON CARBON MATERIAL
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/20/2004
|
Application #:
|
09603256
|
Filing Dt:
|
06/23/2000
|
|
Title:
|
HYDROGENATED OXIDIZED SILICON CARBON MATERIAL
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/10/2005
|
Application #:
|
10604607
|
Filing Dt:
|
08/04/2003
|
|
Publication #:
|
|
Pub Dt:
|
02/10/2005
| | | | |
|
Title:
|
STRUCTURE AND METHOD OF MAKING STRAINED SEMICONDUCTOR CMOS TRANSISTORS HAVING LATTICE-MISMATCHED SEMICONDUCTOR REGIONS UNDERLYING SOURCE AND DRAIN REGIONS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/11/2005
|
Application #:
|
10827065
|
Filing Dt:
|
04/19/2004
|
|
Publication #:
|
|
Pub Dt:
|
10/07/2004
| | | | |
|
Title:
|
HYDROGENATED OXIDIZED SILICON CARBON MATERIAL
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/08/2008
|
Application #:
|
11820303
|
Filing Dt:
|
06/18/2007
|
|
Publication #:
|
|
Pub Dt:
|
10/25/2007
| | | | |
|
Title:
|
METHOD OF MAKING STRAINED SEMICONDUCTOR TRANSISTORS HAVING LATTICE-MISMATCHED SEMICONDUCTOR REGIONS UNDERLYING SOURCE AND DRAIN REGIONS
|
|
|
Assignee
|
|
|
|
|
| 18 ZHANGJIANG RD., PUDONG NEW AREA |
| SHANGHAI, CHINA 201203 |
|
|
Correspondence name and address
|
| |
NICOLAS S. GIKKAS
|
| |
P. O. BOX 2247
|
| |
SARATOGA, CA 95070-0247
|
Search Results as of:
06/18/2024 01:51 AM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
| 
