Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 060472/0367 | |
| Pages: | 6 |
| | Recorded: | 07/11/2022 | | |
| Attorney Dkt #: | 2014-1350/24061.3090US05 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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02/06/2024
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Application #:
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17861586
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Filing Dt:
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07/11/2022
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Publication #:
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Pub Dt:
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10/27/2022
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Title:
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Method Of Fabricating Semiconductor Device With Reduced Trench Distortions
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Assignee
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| 8, LI-HSIN RD, 6. |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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Correspondence name and address
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HAYNES AND BOONE, LLP (24061) IP SECTION
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2323 VICTORY AVENUE
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SUITE 700
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DALLAS, TX 75219
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05/26/2024 04:24 AM
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