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Reel/Frame:061514/0392   Pages: 6
Recorded: 10/24/2022
Attorney Dkt #:TSMP20212705US00
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
17712965
Filing Dt:
04/04/2022
Publication #:
Pub Dt:
10/05/2023
Title:
Source/Drain Regions of Semiconductor Device and Methods of Forming the Same
Assignors
1
Exec Dt:
05/29/2022
2
Exec Dt:
05/23/2022
3
Exec Dt:
05/25/2022
4
Exec Dt:
05/23/2022
5
Exec Dt:
09/21/2022
6
Exec Dt:
05/22/2022
Assignee
1
8, LI-HSIN RD. 6
HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
SLATER MATSIL, LLP
17950 PRESTON ROAD, SUITE 1000
DALLAS, TX 75252

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