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Reel/Frame:047695/0415   Pages: 4
Recorded: 12/06/2018
Attorney Dkt #:0941-3829PUS2
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
06/09/2020
Application #:
16210641
Filing Dt:
12/05/2018
Publication #:
Pub Dt:
02/20/2020
Title:
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH INSULATING STRUCTURE OVER FIN ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME
Assignors
1
Exec Dt:
11/02/2018
2
Exec Dt:
11/08/2018
3
Exec Dt:
11/14/2018
4
Exec Dt:
11/02/2018
5
Exec Dt:
11/02/2018
6
Exec Dt:
11/22/2018
Assignee
1
NO. 8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
BIRCH STEWART KOLASCH & BIRCH LLP
8110 GATEHOUSE ROAD SUITE 100E
FALLS CHURCH, VA 22042

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