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Patent Assignment Details
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Reel/Frame:012172/0421   Pages: 3
Recorded: 09/17/2001
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
09953222
Filing Dt:
09/17/2001
Publication #:
Pub Dt:
03/20/2003
Title:
Method for forming shallow trench isolation in semiconductor device
Assignors
1
Exec Dt:
08/17/2001
2
Exec Dt:
08/17/2001
3
Exec Dt:
08/17/2001
4
Exec Dt:
08/20/2001
Assignee
1
SCIENCE-BASED INDUSTRIAL PARK
123, PARK AVE-3RD,
HSINCHU R.O.C., TAIWAN 30077
Correspondence name and address
INTELLECTUAL PROPERTY SOLUTIONS, PLLC
RAYMOND J. HO
1300 PENNSYLVANIA AVE.
SUITE 700
WASHINGTON, D.C. 20004

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