Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 053558/0427 | |
| Pages: | 3 |
| | Recorded: | 08/20/2020 | | |
| Attorney Dkt #: | 4630.3130000 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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05/30/2023
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Application #:
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16996647
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Filing Dt:
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08/18/2020
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Publication #:
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Pub Dt:
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02/24/2022
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Title:
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Method for Forming a Source/Drain of a Semiconductor Device having an Insulating Stack in a Recess Structure
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Assignee
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| NO. 8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-77 |
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Correspondence name and address
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STERNE, KESSLER, GOLDSTEIN & FOX P.L.L.C
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1100 NEW YORK AVENUE, N.W.
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WASHINGTON, DC 20005
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