Patent Assignment Details
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| Reel/Frame: | 030311/0441 | |
| Pages: | 5 |
| | Recorded: | 04/29/2013 | | |
| Attorney Dkt #: | RSH-P101026 |
| Conveyance: | CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE ADDRESS INCORRECTLY LISTED PREVIOUSLY RECORDED ON REEL 030274 FRAME 0802. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT ASSIGNEE ADDRESS IS SICRYSTAL AG, THURN-UND-TAXIS-STR. 20, D-90411 NUERNBERG, GERMANY. |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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12902704
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Filing Dt:
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10/12/2010
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Publication #:
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Pub Dt:
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04/14/2011
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Title:
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METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE
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Assignee
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| THURN-UND-TAXIS-STR. 20 |
| NUERNBERG, GERMANY D-90411 |
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Correspondence name and address
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LERNER GREENBERG STEMER LLP
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P.O. BOX 2480
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HOLLYWOOD, FL 33022-2480
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