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Reel/Frame:054273/0465   Pages: 4
Recorded: 11/04/2020
Attorney Dkt #:T5057-R527D
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
02/22/2022
Application #:
17089229
Filing Dt:
11/04/2020
Publication #:
Pub Dt:
03/18/2021
Title:
METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND EPITAXIAL MATERIALS
Assignors
1
Exec Dt:
09/26/2011
2
Exec Dt:
09/26/2011
3
Exec Dt:
09/26/2011
4
Exec Dt:
09/27/2011
5
Exec Dt:
09/26/2011
6
Exec Dt:
09/27/2011
Assignee
1
NO. 8, LI-HSIN RD. VI, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300
Correspondence name and address
HAUPTMAN HAM, LLP (TSMC)
2318 MILL ROAD
SUITE 1400
ALEXANDRIA, VA 22314

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