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Reel/Frame:012187/0520   Pages: 2
Recorded: 09/20/2001
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
08/26/2003
Application #:
09885695
Filing Dt:
06/20/2001
Publication #:
Pub Dt:
12/26/2002
Title:
METHOD FOR UNIFORM NITRIDIZATION OF ULTRA-THIN SILICON DIOXIDE LAYERS IN TRANSISTOR GATES
Assignors
1
Exec Dt:
07/10/2001
2
Exec Dt:
07/12/2001
3
Exec Dt:
07/10/2001
Assignee
1
P.O. BOX 655474, MS 3999
DALLAS, TEXAS 75265
Correspondence name and address
TEXAS INSTRUMENTS INCORPORATED
GARY C. HONEYCUTT
P.O. BOX 655474, MS 3999
DALLAS, TEXAS 75265

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