Patent Assignment Details
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| Reel/Frame: | 031747/0530 | |
| Pages: | 4 |
| | Recorded: | 12/02/2013 | | |
| Attorney Dkt #: | 7000.716 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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04/07/2015
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Application #:
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14093694
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Filing Dt:
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12/02/2013
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Publication #:
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Pub Dt:
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04/09/2015
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Title:
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Method of Fabricating III-Nitride Based Semiconductor on Partial Isolated Silicon Substrate
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Assignee
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| NO.101, SEC. 2, GUANGFU RD. |
| EAST DIST. |
| HSINCHU CITY, TAIWAN 300 |
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Correspondence name and address
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JACKSON INTELLECTUAL PROPERTY GROUP PLLC
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106 STARVALE LANE
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SHIPMAN, VA 22971
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05/29/2024 01:33 PM
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