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Reel/Frame:042379/0536   Pages: 4
Recorded: 05/15/2017
Attorney Dkt #:28744-4737 (140051.2)
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
03/05/2019
Application #:
15526864
Filing Dt:
05/15/2017
Publication #:
Pub Dt:
12/14/2017
Title:
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
Assignors
1
Exec Dt:
12/09/2014
2
Exec Dt:
12/09/2014
Assignee
1
9 BATTERY ROAD
#15-01, STRAITS TRADING BUILDING
SINGAPORE, SINGAPORE 049910
Correspondence name and address
RICHARD A. SCHUTH (SUNEDISON) ARMSTRONG
7700 FORSYTH BOULEVARD
SUITE 1800
ST. LOUIS, MO 63105

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