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Patent Assignment Details
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Reel/Frame:030088/0593   Pages: 16
Recorded: 03/26/2013
Attorney Dkt #:1073-5
Conveyance: CHANGE OF NAME (SEE DOCUMENT FOR DETAILS).
Total properties: 10
1
Patent #:
Issue Dt:
07/21/1998
Application #:
08773604
Filing Dt:
12/27/1996
Title:
FLASH MEMORY DEVICE USING AN OPERATIONAL CIRCUIT FOR BIT-BY-BIT VERIFYING OF PROGRAMMED DATA IN MEMORY CELLS AND METHOD OF PROGRAMMING THE SAME
2
Patent #:
Issue Dt:
06/13/2000
Application #:
08998952
Filing Dt:
12/29/1997
Title:
METHOD OF PRE-PROGRAMMING A FLASH MEMORY CELL
3
Patent #:
Issue Dt:
11/23/1999
Application #:
09207228
Filing Dt:
12/08/1998
Title:
METHOD OF ERASING A FLASH MEMORY
4
Patent #:
Issue Dt:
05/23/2000
Application #:
09220594
Filing Dt:
12/28/1998
Title:
LAYOUT OF FLASH MEMORY AND FORMATION METHOD OF THE SAME
5
Patent #:
Issue Dt:
02/06/2001
Application #:
09468934
Filing Dt:
12/22/1999
Title:
POWER RESET CIRCUIT OF A FLASH MEMORY DEVICE
6
Patent #:
Issue Dt:
07/31/2001
Application #:
09472847
Filing Dt:
12/28/1999
Title:
THRESHOLD VOLTAGE SETTING CIRCUIT FOR REFERENCE MEMORY CELL AND METHOD FOR SETTING THRESHOLD VOLTAGE USING THE SAME
7
Patent #:
Issue Dt:
09/18/2001
Application #:
09590071
Filing Dt:
06/09/2000
Title:
Nonvolatile memory sensing circuit and techniques thereof
8
Patent #:
Issue Dt:
08/21/2001
Application #:
09598211
Filing Dt:
06/21/2000
Title:
Reference memory cell initialization circuit and method
9
Patent #:
Issue Dt:
04/30/2002
Application #:
09722470
Filing Dt:
11/28/2000
Title:
ADDRESS BUFFER IN A FLASH MEMORY
10
Patent #:
Issue Dt:
09/03/2002
Application #:
09901898
Filing Dt:
07/11/2001
Publication #:
Pub Dt:
11/22/2001
Title:
NONVOLATILE MEMORY SENSING CIRCUIT AND TECHNIQUES THEREOF
Assignor
1
Exec Dt:
03/23/2012
Assignee
1
2091, GYEONGCHUNG-DAERO, BUBAL-EUP, ICHEON-SI
GYEONGGI-DO, KOREA, REPUBLIC OF
Correspondence name and address
IP&T GROUP LLP
8230 LEESBURG PIKE
SUITE 650
VIENNA, VA 22182

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