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Reel/Frame:053764/0605   Pages: 4
Recorded: 09/14/2020
Attorney Dkt #:NORSTEL
Conveyance: CHANGE OF NAME (SEE DOCUMENT FOR DETAILS).
Total properties: 7
1
Patent #:
Issue Dt:
03/28/2006
Application #:
10281173
Filing Dt:
10/28/2002
Publication #:
Pub Dt:
05/01/2003
Title:
HIGH RESISTIVITY SILICON CARBIDE SINGLE CRYSTAL
2
Patent #:
Issue Dt:
01/27/2009
Application #:
10526059
Filing Dt:
10/13/2005
Publication #:
Pub Dt:
06/29/2006
Title:
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES
3
Patent #:
Issue Dt:
04/22/2008
Application #:
10830047
Filing Dt:
04/23/2004
Publication #:
Pub Dt:
01/06/2005
Title:
DEVICE AND METHOD FOR PRODUCING SINGLE CRYSTALS BY VAPOR DEPOSITION
4
Patent #:
Issue Dt:
05/12/2009
Application #:
11180611
Filing Dt:
07/14/2005
Publication #:
Pub Dt:
01/19/2006
Title:
HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS
5
Patent #:
Issue Dt:
01/17/2012
Application #:
12352793
Filing Dt:
01/13/2009
Publication #:
Pub Dt:
05/07/2009
Title:
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES
6
Patent #:
Issue Dt:
07/23/2013
Application #:
12402551
Filing Dt:
03/12/2009
Publication #:
Pub Dt:
09/17/2009
Title:
HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS
7
Patent #:
Issue Dt:
08/12/2014
Application #:
13340192
Filing Dt:
12/29/2011
Publication #:
Pub Dt:
04/19/2012
Title:
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES
Assignor
1
Exec Dt:
03/11/2019
Assignee
1
RAMSHÄLLSVÄGEN 15
NORRKÖPING, SWEDEN 602 38
Correspondence name and address
STMICROELECTRONICS, INC.
750 CANYON DRIVE
SUITE 300
COPPELL, TX 75019

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