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Reel/Frame:044116/0639   Pages: 6
Recorded: 11/14/2017
Attorney Dkt #:5900/0543PUS1
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
15810927
Filing Dt:
11/13/2017
Publication #:
Pub Dt:
05/16/2019
Title:
Passivation Structure For GaN Field Effect Transistor
Assignors
1
Exec Dt:
10/31/2017
2
Exec Dt:
10/30/2017
3
Exec Dt:
10/30/2017
4
Exec Dt:
10/30/2017
Assignee
1
NO. 69, TECHNOLOGY 7TH RD., HWAYA TECHNOLOGY PARK, GUISHAN DISTRICT,
TAO YUAN CITY, TAIWAN
Correspondence name and address
MUNCY, GEISSLER, OLDS & LOWE, PC
4000 LEGATO RD., SUITE 310
FAIRFAX, VA 22033

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