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Reel/Frame:065868/0666   Pages: 6
Recorded: 12/14/2023
Attorney Dkt #:3047.0470006[15-031705US]
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 6
1
Patent #:
Issue Dt:
08/22/2017
Application #:
15130803
Filing Dt:
04/15/2016
Title:
INTEGRATED STRUCTURES COMPRISING VERTICAL CHANNEL MATERIAL AND HAVING CONDUCTIVELY-DOPED SEMICONDUCTOR MATERIAL DIRECTLY AGAINST LOWER SIDEWALLS OF THE CHANNEL MATERIAL
2
Patent #:
Issue Dt:
04/10/2018
Application #:
15651916
Filing Dt:
07/17/2017
Publication #:
Pub Dt:
11/02/2017
Title:
Methods of Forming Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material
3
Patent #:
Issue Dt:
09/17/2019
Application #:
15945215
Filing Dt:
04/04/2018
Publication #:
Pub Dt:
08/09/2018
Title:
Integrated Structures Comprising Channel Material Extending into source material
4
Patent #:
Issue Dt:
06/01/2021
Application #:
16541029
Filing Dt:
08/14/2019
Publication #:
Pub Dt:
12/05/2019
Title:
METHODS OF FORMING INTEGRATED STRUCTURES COMPRISING VERTICAL CHANNEL MATERIAL AND HAVING CONDUCTIVELY-DOPED SEMICONDUCTOR MATERIAL DIRECTLY AGAINST LOWER SIDEWALLS OF THE CHANNEL MATERIAL
5
Patent #:
Issue Dt:
01/31/2023
Application #:
17308766
Filing Dt:
05/05/2021
Publication #:
Pub Dt:
08/19/2021
Title:
Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material
6
Patent #:
NONE
Issue Dt:
Application #:
18096341
Filing Dt:
01/12/2023
Publication #:
Pub Dt:
06/01/2023
Title:
Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material
Assignor
1
Exec Dt:
03/23/2023
Assignee
1
1603 ORRINGTON AVE
SUITE 600
EVANSTON, ILLINOIS 60201
Correspondence name and address
BROOKS, CAMERON & HUEBSCH, PLLC
1201 MARQUETTE AVE SOUTH
SUITE 400
MINNEAPOLIS, MN 55403

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