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Reel/Frame:046347/0675   Pages: 6
Recorded: 06/12/2018
Attorney Dkt #:TSMP20173305US00
Conveyance: CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE SECOND INVENTOR'S NAME AND ALL ASSIGNOR'S EXECUTION DATES PREVIOUSLY RECORDED ON REEL 045883 FRAME 0463. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNOR'S INTEREST.
Total properties: 1
1
Patent #:
Issue Dt:
07/19/2022
Application #:
15983565
Filing Dt:
05/18/2018
Publication #:
Pub Dt:
11/21/2019
Title:
Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment
Assignors
1
Exec Dt:
06/01/2018
2
Exec Dt:
06/01/2018
3
Exec Dt:
06/01/2018
4
Exec Dt:
06/01/2018
5
Exec Dt:
06/01/2018
Assignee
1
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
SLATER MATSIL, LLP
17950 PRESTON RD., SUITE 1000
DALLAS, TX 75252

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