Patent Assignment Details
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Reel/Frame: | 009989/0683 | |
| Pages: | 3 |
| | Recorded: | 05/25/1999 | | |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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07/24/2001
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Application #:
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09318119
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Filing Dt:
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05/25/1999
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Title:
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METHOD OF FORMING A HVNMOS WITH AN N BURIED LAYER COMBINED WITH N WELL AND A STRUCTURE OF THE SAME
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Assignee
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SCIENCE-BASED INDUSTRIAL PARK |
NO. 9, CREATION ROAD 1 |
HSINCHU, TAIWAN R.O.C |
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Correspondence name and address
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NATH & ASSOCIATES
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HAROLD L. NOVICK
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1030 15TH STREET, NW
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6TH FLOOR
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WASHINGTON, DC 20005
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