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Reel/Frame:023522/0699   Pages: 2
Recorded: 11/16/2009
Attorney Dkt #:065542-5091
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
12/25/2012
Application #:
12619125
Filing Dt:
11/16/2009
Publication #:
Pub Dt:
06/24/2010
Title:
METHOD FOR FORMING DEEP TRENCH IN SEMICONDUCTOR DEVICE
Assignor
1
Exec Dt:
10/30/2009
Assignee
1
1 HYANGJEONG-DONG, HEUNGDUK-GU, CHEONGJU-SI
CHUNGCHEONGBUK-DO, KOREA, REPUBLIC OF 361-725
Correspondence name and address
COLLIN PARK
1111 PENNSYLVANIA AVE., NW
MORGAN, LEWIS & BOCKIUS LLP
WASHINGTON, DC 20004

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