Patent Assignment Details
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Reel/Frame: | 051357/0709 | |
| Pages: | 3 |
| | Recorded: | 12/23/2019 | | |
Attorney Dkt #: | 32435-001US-100 |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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05/17/2016
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Application #:
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13994306
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Filing Dt:
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06/14/2013
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Publication #:
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Pub Dt:
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10/17/2013
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Title:
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PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPOR TRANSPORT METHOD AND ANNEALING SILICON CARBIDE SINGLE CRYSTAL IN SITU
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Assignee
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ROOM 118, BUILDING A, NO. 8, 3RD SOUTH STREET |
ZHONGGUANCUN, HAIDIAN DISTRICT |
BEIJING, CHINA 100190 |
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Correspondence name and address
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WALTER | HAVERFIELD LLP
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1301 EAST 9TH STREET, STE 3500
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THE TOWER AT ERIEVIEW
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CLEVELAND, OH 44114-1821
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