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Reel/Frame:046407/0710   Pages: 5
Recorded: 06/21/2018
Attorney Dkt #:62KS-273522
Conveyance: NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS).
Total properties: 25
1
Patent #:
7082052
Issue Dt:
07/25/2006
Application #:
10773549
Filing Dt:
02/06/2004
Publication #:
US20050174835
Pub Dt:
08/11/2005
Title:
MULTI-RESISTIVE STATE ELEMENT WITH REACTIVE METAL
2
Patent #:
6972985
Issue Dt:
12/06/2005
Application #:
10868578
Filing Dt:
06/15/2004
Publication #:
US20050243595
Pub Dt:
11/03/2005
Title:
MEMORY ELEMENT HAVING ISLANDS
3
Patent #:
7538338
Issue Dt:
05/26/2009
Application #:
10934951
Filing Dt:
09/03/2004
Publication #:
US20060050598
Pub Dt:
03/09/2006
Title:
MEMORY USING VARIABLE TUNNEL BARRIER WIDTHS
4
Patent #:
7394679
Issue Dt:
07/01/2008
Application #:
11473005
Filing Dt:
06/22/2006
Publication #:
US20060245243
Pub Dt:
11/02/2006
Title:
MULTI-RESISTIVE STATE ELEMENT WITH REACTIVE METAL
5
Patent #:
9058300
Issue Dt:
06/16/2015
Application #:
12069105
Filing Dt:
02/07/2008
Publication #:
US20090204777
Pub Dt:
08/13/2009
Title:
Integrated circuits and methods to control access to multiple layers of memory
6
Patent #:
8062942
Issue Dt:
11/22/2011
Application #:
12215958
Filing Dt:
06/30/2008
Publication #:
US20080293196
Pub Dt:
11/27/2008
Title:
METHOD FOR FABRICATING MULTI-RESISTIVE STATE MEMORY DEVICES
7
Patent #:
7889539
Issue Dt:
02/15/2011
Application #:
12653486
Filing Dt:
12/14/2009
Publication #:
US20100157657
Pub Dt:
06/24/2010
Title:
MULTI-RESISTIVE STATE MEMORY DEVICE WITH CONDUCTIVE OXIDE ELECTRODES
8
Patent #:
8339867
Issue Dt:
12/25/2012
Application #:
12653850
Filing Dt:
12/18/2009
Publication #:
US20100195409
Pub Dt:
08/05/2010
Title:
FUSE ELEMENTS BASED ON TWO-TERMINAL RE-WRITEABLE NON-VOLATILE MEMORY
9
Patent #:
8237142
Issue Dt:
08/07/2012
Application #:
12932642
Filing Dt:
03/01/2011
Publication #:
US20110155990
Pub Dt:
06/30/2011
Title:
CONTINUOUS PLANE OF THIN-FILM MATERIALS FOR A TWO-TERMINAL CROSS-POINT MEMORY
10
Patent #:
8395928
Issue Dt:
03/12/2013
Application #:
13206460
Filing Dt:
08/09/2011
Publication #:
US20110291067
Pub Dt:
12/01/2011
Title:
THRESHOLD DEVICE FOR A MEMORY ARRAY
11
Patent #:
8675389
Issue Dt:
03/18/2014
Application #:
13272985
Filing Dt:
10/13/2011
Publication #:
US20120033481
Pub Dt:
02/09/2012
Title:
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
12
Patent #:
8274817
Issue Dt:
09/25/2012
Application #:
13281335
Filing Dt:
10/25/2011
Publication #:
US20120037879
Pub Dt:
02/16/2012
Title:
NON VOLATILE MEMORY DEVICE ION BARRIER
13
Patent #:
8611130
Issue Dt:
12/17/2013
Application #:
13301490
Filing Dt:
11/21/2011
Publication #:
US20120064691
Pub Dt:
03/15/2012
Title:
Method For Fabricating Multi Resistive State Memory Devices
14
Patent #:
8610099
Issue Dt:
12/17/2013
Application #:
13586580
Filing Dt:
08/15/2012
Publication #:
US20130207066
Pub Dt:
08/15/2013
Title:
PLANAR RESISTIVE MEMORY INTEGRATION
15
Patent #:
9029827
Issue Dt:
05/12/2015
Application #:
14062609
Filing Dt:
10/24/2013
Publication #:
US20140231741
Pub Dt:
08/21/2014
Title:
PLANAR RESISTIVE MEMORY INTEGRATION
16
Patent #:
9159408
Issue Dt:
10/13/2015
Application #:
14167694
Filing Dt:
01/29/2014
Publication #:
US20140211542
Pub Dt:
07/31/2014
Title:
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
17
Patent #:
9484533
Issue Dt:
11/01/2016
Application #:
14453982
Filing Dt:
08/07/2014
Publication #:
US20140346435
Pub Dt:
11/27/2014
Title:
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS
18
Patent #:
9159913
Issue Dt:
10/13/2015
Application #:
14463518
Filing Dt:
08/19/2014
Publication #:
US20150029780
Pub Dt:
01/29/2015
Title:
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
19
Patent #:
9831425
Issue Dt:
11/28/2017
Application #:
14844805
Filing Dt:
09/03/2015
Publication #:
US20150380642
Pub Dt:
12/31/2015
Title:
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
20
Patent #:
9570515
Issue Dt:
02/14/2017
Application #:
14850702
Filing Dt:
09/10/2015
Publication #:
US20160005793
Pub Dt:
01/07/2016
Title:
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
21
Patent #:
9818799
Issue Dt:
11/14/2017
Application #:
15338857
Filing Dt:
10/31/2016
Publication #:
US20170110514
Pub Dt:
04/20/2017
Title:
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS
22
Patent #:
9806130
Issue Dt:
10/31/2017
Application #:
15393545
Filing Dt:
12/29/2016
Publication #:
US20170179197
Pub Dt:
06/22/2017
Title:
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
23
Patent #:
10224480
Issue Dt:
03/05/2019
Application #:
15797452
Filing Dt:
10/30/2017
Publication #:
US20180130946
Pub Dt:
05/10/2018
Title:
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
24
Patent #:
10340312
Issue Dt:
07/02/2019
Application #:
15797716
Filing Dt:
10/30/2017
Publication #:
US20180122857
Pub Dt:
05/03/2018
Title:
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
25
Patent #:
10186553
Issue Dt:
01/22/2019
Application #:
15811179
Filing Dt:
11/13/2017
Publication #:
US20180130850
Pub Dt:
05/10/2018
Title:
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS
Assignor
1
UNITY SEMICONDUCTOR CORPORATION
Exec Dt:
06/18/2018
Assignee
1
HEFEI RELIANCE MEMORY LIMITED
ROOM A-08, 14TH FLOOR, PLAZA A, BUILDING J1
INNOVATIVE INDUSTRIAL PARK PHASE II, HIGH-TECH ZONE
HEFEI, CHINA
Correspondence name and address
SHEPPARD, MULLIN, RICHTER & HAMPTON LLP
379 LYTTON AVENUE
PALO ALTO, CA 94301

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