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Reel/Frame:042653/0731   Pages: 6
Recorded: 06/08/2017
Attorney Dkt #:24061.2737US02
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
10/22/2019
Application #:
15617691
Filing Dt:
06/08/2017
Publication #:
Pub Dt:
09/21/2017
Title:
SEMICONDUCTOR STRUCTURE FOR FLASH MEMORY CELLS AND METHOD OF MAKING SAME
Assignors
1
Exec Dt:
02/07/2014
2
Exec Dt:
02/07/2014
3
Exec Dt:
02/07/2014
4
Exec Dt:
02/07/2014
5
Exec Dt:
02/07/2014
6
Exec Dt:
02/07/2014
7
Exec Dt:
02/10/2014
Assignee
1
NO. 8, LI-HSIN RD. 6, SCIENCE-BASED INDUSTRIAL PARK
HSIN-CHU, TAIWAN 300-77
Correspondence name and address
HAYNES AND BOONE, LLP IP SECTION
2323 VICTORY AVENUE
SUITE 700
DALLAS, TX 75219

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