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Reel/Frame:026811/0732   Pages: 3
Recorded: 08/26/2011
Attorney Dkt #:6104.002US
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
02/04/2014
Application #:
13218476
Filing Dt:
08/26/2011
Publication #:
Pub Dt:
02/28/2013
Title:
Method of forming a self-aligned contact opening in MOSFET
Assignors
1
Exec Dt:
08/05/2011
2
Exec Dt:
08/04/2011
3
Exec Dt:
08/02/2011
Assignee
1
7F, NO. 6, DUSING 1ST ROAD,SCIENCE-BASED INDUSTRIAL PARK HSINCHU
HSINCHU, TAIWAN
Correspondence name and address
MIN-LEE TENG
7F-2, NO. 79, SEC.2, ROOSEVELT RD.
TAIPEI, 106 TAIWAN

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