Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
| Reel/Frame: | 023748/0779 | |
| Pages: | 3 |
| | Recorded: | 01/07/2010 | | |
| Attorney Dkt #: | 251427-1050 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
|
Total properties:
1
|
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
12683871
|
Filing Dt:
|
01/07/2010
|
|
Publication #:
|
|
Pub Dt:
|
03/10/2011
| | | | |
|
Title:
|
GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same
|
|
|
Assignee
|
|
|
|
|
| 1001 UNIVERSITY RD. |
| HSINCHU, TAIWAN 30010 |
|
|
Correspondence name and address
|
| |
THOMAS, KAYDEN, HORSTEMEYER & RISLEY, LL
|
| |
600 GALLERIA PARKWAY, S.E.
|
| |
STE 1500
|
| |
ATLANTA, GA 30339-5994
|
Search Results as of:
06/18/2024 02:12 AM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|
