Total properties:
11
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Patent #:
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Issue Dt:
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12/24/2002
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Application #:
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09761808
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Filing Dt:
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01/16/2001
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Publication #:
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Pub Dt:
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08/23/2001
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Title:
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METHOD FOR GROWING SIC SINGLE CRYSTALS
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Patent #:
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Issue Dt:
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02/05/2002
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Application #:
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09761809
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Filing Dt:
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01/16/2001
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Publication #:
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Pub Dt:
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06/28/2001
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Title:
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Device and method for producing at least one SiC single crystal
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Patent #:
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Issue Dt:
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02/10/2004
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Application #:
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09933049
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Filing Dt:
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08/20/2001
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Publication #:
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Pub Dt:
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02/07/2002
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Title:
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METHOD FOR GROWING AN ALPHA-SIC BULK SINGLE CRYSTAL
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Patent #:
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Issue Dt:
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08/03/2004
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Application #:
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10042058
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Filing Dt:
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01/07/2002
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Publication #:
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Pub Dt:
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07/25/2002
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Title:
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DEVICE HAVING A FOIL-LINED CRUCIBLE FOR THE SUBLIMATION GROWTH OF AN SIC SINGLE CRYSTAL
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Patent #:
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Issue Dt:
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08/10/2004
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Application #:
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10042060
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Filing Dt:
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01/07/2002
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Publication #:
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Pub Dt:
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07/04/2002
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Title:
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METHOD FOR THE SUBLIMATION GROWTH OF AN SIC SINGLE CRYSTAL, INVOLVING HEATING UNDER GROWTH PRESSURE
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Patent #:
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Issue Dt:
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04/20/2004
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Application #:
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10042099
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Filing Dt:
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01/07/2002
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Publication #:
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Pub Dt:
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07/11/2002
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Title:
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SEED CRYSTAL HOLDER WITH LATERAL MOUNT FOR AN SIC SEED CRYSTAL
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Patent #:
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Issue Dt:
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10/21/2014
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Application #:
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12852642
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Filing Dt:
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08/09/2010
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Publication #:
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Pub Dt:
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12/08/2011
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Title:
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PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET AND MONOCRYSTALLINE SIC SUBSTRATE WITH HOMOGENEOUS RESISTANCE DISTRIBUTION
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Patent #:
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Issue Dt:
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06/24/2014
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Application #:
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13338639
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Filing Dt:
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12/28/2011
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Publication #:
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Pub Dt:
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07/04/2013
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Title:
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PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE
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Patent #:
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Issue Dt:
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06/10/2014
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Application #:
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13338694
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Filing Dt:
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12/28/2011
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Publication #:
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Pub Dt:
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07/04/2013
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Title:
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PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A HOMOGENEOUS LATTICE PLANE COURSE
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Patent #:
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Issue Dt:
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03/07/2017
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Application #:
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14258345
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Filing Dt:
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04/22/2014
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Publication #:
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Pub Dt:
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08/14/2014
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Title:
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MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE
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Patent #:
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Issue Dt:
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08/15/2017
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Application #:
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14848560
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Filing Dt:
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09/09/2015
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Publication #:
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Pub Dt:
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03/10/2016
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Title:
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METHOD FOR PRODUCING A VANADIUM-DOPED SILICON CARBIDE VOLUME MONOCRYSTAL, AND VANADIUM-DOPED SILICON CARBIDE SUBSTRATE
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