Patent Assignment Details
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| Reel/Frame: | 017920/0812 | |
| Pages: | 3 |
| | Recorded: | 05/22/2006 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11437661
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Filing Dt:
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05/22/2006
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Publication #:
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Pub Dt:
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06/28/2007
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Title:
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Phase-change memory layer and method of manufacturing the same and phase-change memory cell
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Assignee
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| NO. 195, SEC. 4, CHUNG-HSING RD. |
| CHU-TUNG, HSINCHU, TAIWAN R.O.C. |
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Correspondence name and address
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RABIN & BERDO, P.C.
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1101 14TH STREET, N.W., SUITE 500
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WASHINGTON, D.C. 20005
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