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Reel/Frame:039353/0850   Pages: 10
Recorded: 08/05/2016
Attorney Dkt #:MI22-5945
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
10090318
Issue Dt:
10/02/2018
Application #:
15229490
Filing Dt:
08/05/2016
Publication #:
US20180040626
Pub Dt:
02/08/2018
Title:
Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate And A Charge storage Structure And Method Of Forming A Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate And A Charge Storage Structure
Assignors
1
ZHU, HONGBIN
Exec Dt:
07/06/2016
2
DENNISON, CHARLES H.
Exec Dt:
07/15/2016
3
HALLER, GORDON A.
Exec Dt:
07/06/2016
4
CARLSON, MERRI L.
Exec Dt:
07/12/2016
5
HOPKINS, JOHN D.
Exec Dt:
07/06/2016
6
NG, JIA HUI
Exec Dt:
07/14/2016
7
SUN, JIE
Exec Dt:
07/06/2016
Assignee
1
MICRON TECHNOLOGY, INC.
MS 1-525
8000 SOUTH FEDERAL WAY
BOISE, IDAHO 83716
Correspondence name and address
MARK S. MATKIN
WELLS ST. JOHN, P.S.
601 W. MAIN AVENUE, SUITE 600
SPOKANE, WA 99201

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