Patent Assignment Details
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Reel/Frame: | 042742/0888 | |
| Pages: | 4 |
| | Recorded: | 06/19/2017 | | |
Attorney Dkt #: | 81693034US01 |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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01/08/2019
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Application #:
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15626278
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Filing Dt:
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06/19/2017
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Publication #:
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Pub Dt:
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12/20/2018
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Title:
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EXTENDED DRAIN NMOS TRANSISTOR WITH BURIED P TYPE REGION
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Assignee
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HIGH TECH CAMPUS 60 |
EINDHOVEN, NETHERLANDS 5656 AG |
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Correspondence name and address
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NXP B.V.
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HIGH TECH CAMPUS 60
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EINDHOVEN, 5656 AG NETHERLANDS
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