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Reel/Frame:025572/0934   Pages: 4
Recorded: 01/03/2011
Attorney Dkt #:BUR920100104US1
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
06/17/2014
Application #:
12983489
Filing Dt:
01/03/2011
Publication #:
Pub Dt:
07/05/2012
Title:
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERMANIUM OR SILICON GERMANIUM CARBIDE GATE(S) AND METHOD OF FORMING THE STRUCTURE
Assignors
1
Exec Dt:
11/29/2010
2
Exec Dt:
12/03/2010
3
Exec Dt:
12/16/2010
4
Exec Dt:
12/03/2010
Assignee
1
NEW ORCHARD RD.
ARMONK, NEW YORK 10504
Correspondence name and address
FREDERICK W. GIBB, III GIBB INTELLECTUAL
844 WEST STREET
SUITE 100
ANNAPOLIS, MD 21401

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