Patent Assignment Details
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| Reel/Frame: | 035613/0941 | |
| Pages: | 3 |
| | Recorded: | 05/07/2015 | | |
| Attorney Dkt #: | TLCNP11533C1 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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06/06/2017
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Application #:
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14694602
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Filing Dt:
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04/23/2015
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Publication #:
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Pub Dt:
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08/13/2015
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Title:
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EPITAXIAL STRUCTURE AND EPITAXIAL GROWTH METHOD FOR FORMING EPITAXIAL LAYER WITH CAVITIES
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Assignee
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| NO. 3, GONGYE E. 3RD RD. |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 30075 |
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Correspondence name and address
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MOSER TABOADA/PRAVEER GUPTA
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1030 BROAD STREET
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SUITE 203
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SHREWSBURY, NJ 07702
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