Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 059393/0947 | |
| Pages: | 5 |
| | Recorded: | 03/24/2022 | | |
| Attorney Dkt #: | 24061.5 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
2
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Patent #:
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Issue Dt:
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11/20/2018
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Application #:
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15789150
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Filing Dt:
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10/20/2017
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Title:
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Free Layer Sidewall Oxidation and Spacer Assisted Magnetic Tunnel Junction (MTJ) Etch for High Performance Magnetoresitive Random Access Memory (MRAM) Devices
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Patent #:
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Issue Dt:
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09/22/2020
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Application #:
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16184518
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Filing Dt:
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11/08/2018
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Publication #:
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Pub Dt:
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05/14/2020
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Title:
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Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (Spin Torque Transfer-Magnetic Random Access Memory) Devices
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Assignee
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| NO. 8, LI-HSIN ROAD 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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Correspondence name and address
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HAYNES AND BOONE, LLP
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2323 VICTORY AVENUE, SUITE 700
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IP SECTION
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DALLAS, TX 75219
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06/15/2024 01:11 PM
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