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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
08/21/2018
Application #:
15446295
Filing Dt:
03/01/2017
Publication #:
Pub Dt:
06/22/2017
Inventors:
Yu-Chang LIN, Chun-Feng NIEH, Huicheng CHANG, Hou-Yu CHEN, Yong-Yan LU
Title:
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DEVICES
Assignment: 1
Reel/Frame:
041421/0985Recorded: 03/01/2017Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
11/03/2015
Exec Dt:
11/03/2015
Exec Dt:
11/03/2015
Exec Dt:
11/04/2015
Exec Dt:
11/04/2015
Assignee:
8F., NO. 17, XINXING ST.
DANSHUI DIST.
TAIPEI CITY, TAIWAN 251
Correspondent:
MCDERMOTT WILL & EMERY LLP
THE MCDERMOTT BUILDING
500 NORTH CAPITOL STREET, N.W.
WASHINGTON, DC 20001

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