Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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02/05/2019
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Application #:
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15559702
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Filing Dt:
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09/19/2017
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Publication #:
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Pub Dt:
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09/06/2018
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Inventors:
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Ken GOTO, Akinori KOUKITU, Hisashi MURAKAMI, Kohei SASAKI, Masataka HIGASHIWAKI et al
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Title:
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High voltage withstand Ga2O3-based single crystal Schottky barrier diode
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1-19-43 HIGASHI-OIZUMI |
| NERIMA-KU |
| TOKYO, JAPAN 178-8511 |
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| 4-2-1, NUKUI-KITAMACHI |
| KOGANEI-SHI |
| TOKYO, JAPAN 184-8795 |
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| 3-8-1, HARUMI-CHO |
| FUCHU-SHI |
| TOKYO, JAPAN 183-8538 |
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| SCULLY SCOTT MURPHY & PRESSER, PC |
| 400 GARDEN CITY PLAZA |
| SUITE 300 |
| GARDEN CITY, NY 11530 |
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