Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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02/19/2019
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Application #:
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15703850
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Filing Dt:
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09/13/2017
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Publication #:
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Pub Dt:
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03/22/2018
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Inventors:
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Can Bayram, Ryan William Grady, Kihoon Park
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Title:
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Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 352 HENRY ADMINISTRATION BUILDING |
| 506 SOUTH WRIGHT STREET |
| URBANA, ILLINOIS 61801 |
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| PATENT DOCKET ADMINISTRATOR LOWENSTEIN S |
| ONE LOWENSTEIN DRIVE |
| ROSELAND, NJ 07068 |
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Assignment:
2
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CONFIRMATORY LICENSE (SEE DOCUMENT FOR DETAILS).
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| 4201 WILSON BLVD |
| ROOM 1265 |
| ARLINGTON, VIRGINIA 22230 |
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| NATIONAL SCIENCE FOUNDATION |
| 4201 WILSON BLVD |
| ROOM 1265 |
| ARLINGTON, VA 22230 |
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