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Patent Assignment Abstract of Title

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Total Assignments: 2

Patent #:	10720326	Issue Dt:	07/21/2020	Application #:	16270454	Filing Dt:	02/07/2019
Publication #:	20190189439	Pub Dt:	06/20/2019
Inventors:	Yutaka MIKAWA, Tae MOCHIZUKI, Shinichiro KAWABATA, Hideo FUJISAWA, Hideo NAMITA
Title:	METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

Assignment: 1

Reel/Frame:

048271/0697

Recorded: 02/07/2019

Pages: 11

Conveyance:

ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).

Assignors:

MIKAWA, YUTAKA

Exec Dt:

01/15/2019

FUJISAWA, HIDEO

Exec Dt:

01/17/2019

MOCHIZUKI, TAE

Exec Dt:

01/17/2019

NAMITA, HIDEO

Exec Dt:

01/17/2019

KAWABATA, SHINICHIRO

Exec Dt:

01/16/2019

Assignee:

MITSUBISHI CHEMICAL CORPORATION

1-1, MARUNOUCHI 1-CHOME, CHIYODA-KU

TOKYO, JAPAN 100-8251

Correspondent:

LEASON ELLIS LLP

ONE BARKER AVENUE

WHITE PLAINS, NY 106011523

Assignment: 2

Reel/Frame:

048767/0434

Recorded: 04/01/2019

Pages: 13

Conveyance:

CORRECTIVE ASSIGNMENT TO CORRECT THE FOURTH INVENTOR HIDEO NAMITA DATE OF EXECUTION PREVIOUSLY RECORDED ON REEL 048271 FRAME 0697. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT.

Assignors:

MIKAWA, YUTAKA

Exec Dt:

01/15/2019