Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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08/31/2021
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Application #:
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16732219
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Filing Dt:
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12/31/2019
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Publication #:
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Pub Dt:
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07/01/2021
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Inventors:
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Perng-Fei Yuh, Yih Wang, Ku-Feng Lin, Jui-Che Tsai, Hiroki Noguchi, Fu-An Wu
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Title:
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NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAGNETIC TUNNEL JUNCTION CELLS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 8, LI-HSIN 6 ROAD |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 30077 |
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| FOLEY & LARDNER LLP |
| 500 WOODWARD AVENUE |
| SUITE 2700 |
| DETROIT, MI 48226 |
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