Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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08/31/2021
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Application #:
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16592281
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Filing Dt:
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10/03/2019
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Publication #:
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Pub Dt:
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04/23/2020
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Inventors:
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Han-Yu Lin, Chansyun David Yang, Tze-Chung Lin, Fang-Wei Lee, Fo-Ju Lin, Li-Te Lin et al
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Title:
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Inner Spacer Formation in Multi-Gate Transistors
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 8, LI-HSIN RD. 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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| HAYNES AND BOONE, LLP (24061) IP SECTION |
| 2323 VICTORY AVENUE |
| SUITE 700 |
| DALLAS, TX 75219 |
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