Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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11/28/2023
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Application #:
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17458087
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Filing Dt:
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08/26/2021
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Publication #:
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Pub Dt:
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12/16/2021
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Inventors:
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Chansyun David Yang, Fang-Wei Lee, Li-Te Lin, Han-Yu Lin, Tze-Chung Lin, Fo-Ju Lin et al
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Title:
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Inner Spacer Formation in Multi-Gate Transistors
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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8, LI-HSIN RD. 6 |
HSINCHU SCIENCE PARK |
HSINCHU, TAIWAN 300-78 |
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HAYNES AND BOONE, LLP (24061) IP SECTION |
2323 VICTORY AVENUE |
SUITE 700 |
DALLAS, TX 75219 |
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05/16/2024 04:04 PM
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