Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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12/19/2023
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Application #:
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17873428
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Filing Dt:
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07/26/2022
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Publication #:
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Pub Dt:
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12/01/2022
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Inventors:
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Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu
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Title:
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Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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678 S. HILLVIEW DRIVE |
MILPITAS, CALIFORNIA 95035 |
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HAYNES AND BOONE, LLP (24061) IP SECTION |
2323 VICTORY AVENUE |
SUITE 700 |
DALLAS, TX 75219 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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8, LI-HSIN RD. 6 |
HSINCHU SCIENCE PARK |
HSINCHU, TAIWAN 300-78 |
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HAYNES AND BOONE, LLP (24061) IP SECTION |
2323 VICTORY AVENUE |
SUITE 700 |
DALLAS, TX 75219 |
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05/21/2024 02:41 PM
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