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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
11862675
Issue Dt:
01/02/2024
Application #:
17462403
Filing Dt:
08/31/2021
Publication #:
20210399087
Pub Dt:
12/23/2021
Inventors:
Karthick Murukesan, Wen-Chih Chiang, Chun Lin Tsai, Ker-Hsiao Huo, Kuo-Ming Wu et al
Title:
HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR (HVMOS) DEVICE INTEGRATED WITH A HIGH VOLTAGE JUNCTION TERMINATION (HVJT) DEVICE
Assignment: 1
Reel/Frame:
057340/0946Recorded: 08/31/2021Pages: 15
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
MURUKESAN, KARTHICK
Exec Dt:
05/25/2018
CHIANG, WEN-CHIH
Exec Dt:
04/30/2018
TSAI, CHUN LIN
Exec Dt:
05/03/2018
HUO, KER-HSIAO
Exec Dt:
05/08/2018
WU, KUO-MING
Exec Dt:
05/21/2018
CHEN, PO-CHIH
Exec Dt:
05/03/2018
SU, RU-YI
Exec Dt:
05/03/2018
LIN, SHIUAN-JENG
Exec Dt:
04/30/2018
CHEN, YI-MIN
Exec Dt:
05/23/2018
LIN, HUNG-CHOU
Exec Dt:
05/09/2018
CHIU, YI-CHENG
Exec Dt:
04/30/2018
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6
HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondent:
ESCHWEILER & POTASHNIK, LLC
629 EUCLID AVE.
SUITE 1101
CLEVELAND, OH 44114

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